Toshiba Corporation 2SK2173(F) | 搜芯易Sourcengine

Toshiba Corporation 2SK2173(F)

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-3PN
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
50 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
550 pF
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
683 mJ
Drain-source On Resistance-Max
0.025 ohm
Pulsed Drain Current-Max (IDM)
200 A