ONSEMI 2SK2161 | 搜芯易Sourcengine

ONSEMI 2SK2161

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 9A I(D), 200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
ISOLATED
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Pulsed Drain Current-Max (IDM) (A)
36
Drain-source On Resistance-Max (ohm)
0.35