Toshiba Corporation 2SK211-GRTE85R | 搜芯易Sourcengine

Toshiba Corporation 2SK211-GRTE85R

生命周期状态
EOL
说明
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
CASCODE J-FET
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.15 pF
Operating Temperature-Max
125 Cel
Transistor Element Material
SILICON