NEC Corporation 2SK1954-Z-E2 | 搜芯易Sourcengine

NEC Corporation 2SK1954-Z-E2

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 4A I(D), 180V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
20
Drain Current-Max (ID) (A)
4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
180
Feedback Cap-Max (Crss) (pF)
50
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1
Avalanche Energy Rating (Eas) (mJ)
44.3
Pulsed Drain Current-Max (IDM) (A)
16
Drain-source On Resistance-Max (ohm)
0.65