2SK1239
SANYO Electric Co.,Ltd.
- 生命周期状态Transferred
- 说明RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeS-MQMW-F4
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Additional FeatureLOW NOISE, HIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Drain Current-Max (ID) (A)0.07
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)5
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)0.27
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2SK1239