2SK1187
SANKEN ELECTRIC CO.,LTD.
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)12
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Avalanche Energy Rating (Eas) (mJ)58
- Pulsed Drain Current-Max (IDM) (A)48
- Drain-source On Resistance-Max (ohm)0.16
- Screening Level / Reference StandardUL APPROVED
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2SK1187