Toshiba Corporation 2SK1120 | 搜芯易Sourcengine

Toshiba Corporation 2SK1120

生命周期状态
EOL
说明
MOSFETs to3pn pln,discon(08-10)/phase-out(11-01)/obsolete(11-04),
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1000
Feedback Cap-Max (Crss) (pF)
100
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
24
Drain-source On Resistance-Max (ohm)
1.8