NEC Corporation 2SJ606-S-AZ | 搜芯易Sourcengine

NEC Corporation 2SJ606-S-AZ

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 83A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
83
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
160
Pulsed Drain Current-Max (IDM) (A)
300
Drain-source On Resistance-Max (ohm)
0.023
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED