Hitachi, Ltd. 2SJ551(L) | 搜芯易Sourcengine

Hitachi, Ltd. 2SJ551(L)

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 18A I(D), 0.11ohm, 1-Element, P-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
60
Drain Current-Max (ID) (A)
18
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.11