Toshiba Corporation 2SJ509 | 搜芯易Sourcengine

Toshiba Corporation 2SJ509

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PBCY-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
1 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
0.9 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
2.5 ohm
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED