Toshiba Corporation 2SJ360(TE12L,F) | 搜芯易Sourcengine

Toshiba Corporation 2SJ360(TE12L,F)

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET MOSFET P-Ch, 60V, 1A, Rdson 0.73 Ohm
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-243AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
1 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.5 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
1.2 ohm
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED