Toshiba Corporation 2SJ115Y | 搜芯易Sourcengine

Toshiba Corporation 2SJ115Y

生命周期状态
Active-Unconfirmed
说明
Power Field-Effect Transistor, 8A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
100
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
160
Feedback Cap-Max (Crss) (pF)
110
Operating Temperature-Max (Cel)
150