Toshiba Corporation 2SD2604 | 搜芯易Sourcengine

Toshiba Corporation 2SD2604

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 5A I(C), 95V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
1.5 V
JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
1000
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
5 A
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
95 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
20 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED