INCHANGE SEMICONDUCTOR CO LTD 2SD2399 | 搜芯易Sourcengine

INCHANGE SEMICONDUCTOR CO LTD 2SD2399

生命周期状态
Contact Mfr
说明
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
1.5
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
1000
Power Dissipation-Max (W)
30
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
4
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
80
Power Dissipation Ambient-Max (W)
2
Collector-base Capacitance-Max (pF)
35
Transition Frequency-Nom (fT) (MHz)
40