UTC, Ltd. 2SD1857L-P-TM3-T | 搜芯易Sourcengine

UTC, Ltd. 2SD1857L-P-TM3-T

生命周期状态
Active
REACH
REACH compliant
说明
Power Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
0.4
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
82
Power Dissipation-Max (W)
2
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
120
Power Dissipation Ambient-Max (W)
2
Collector-base Capacitance-Max (pF)
20
Transition Frequency-Nom (fT) (MHz)
80