ONSEMI 2SD1803S-E | 搜芯易Sourcengine

ONSEMI 2SD1803S-E

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e6
VCEsat-Max (V)
0.55
Case Connection
COLLECTOR
Terminal Finish
Tin/Bismuth (Sn/Bi)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
35
Power Dissipation-Max (W)
20
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Power Dissipation Ambient-Max (W)
1
Collector-base Capacitance-Max (pF)
60
Transition Frequency-Nom (fT) (MHz)
130
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED