Toshiba Corporation 2SD1222 | 搜芯易Sourcengine

Toshiba Corporation 2SD1222

生命周期状态
EOL
说明
Small Signal Bipolar Transistor, 3A I(C), NPN
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
1.5
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
1000
Power Dissipation-Max (W)
15
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
40
Power Dissipation Ambient-Max (W)
1