Mitsubishi Electric Corp. 2SC730 | 搜芯易Sourcengine

Mitsubishi Electric Corp. 2SC730

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-39
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
10 dB
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
0.4 A
Power Dissipation-Max (Abs)
1 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
3 W