Toshiba Corporation 2SC5748 | 搜芯易Sourcengine

Toshiba Corporation 2SC5748

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 16A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
4.8
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
16 A
Power Dissipation-Max (Abs)
210 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
900 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
2 MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED