ONSEMI 2SC5551AF-TD-E | 搜芯易Sourcengine

ONSEMI 2SC5551AF-TD-E

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF BJT NPN 30V 0.3A 1300mW 4-Pin(3+Tab) SOT-89 T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
JEDEC-95 Code
TO-243
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e6
Case Connection
COLLECTOR
Terminal Finish
Tin/Bismuth (Sn/Bi)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
S BAND
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.3
Collector-emitter Voltage-Max (V)
30
Collector-base Capacitance-Max (pF)
4
Transition Frequency-Nom (fT) (MHz)
3500
Time@Peak Reflow Temperature-Max (s)
30