Toshiba Corporation 2SC5232 | 搜芯易Sourcengine

Toshiba Corporation 2SC5232

生命周期状态
EOL
说明
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.25 V
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
300
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.5 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
130 MHz
Collector-base Capacitance-Max
7 pF