Toshiba Corporation 2SC5098-OTE85R | 搜芯易Sourcengine

Toshiba Corporation 2SC5098-OTE85R

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
80
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.015 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
10 V
Transition Frequency-Nom (fT)
10000 MHz
Collector-base Capacitance-Max
0.85 pF