Toshiba Corporation 2SC5086 | 搜芯易Sourcengine

Toshiba Corporation 2SC5086

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
80
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.08
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
12
Collector-base Capacitance-Max (pF)
1.15
Transition Frequency-Nom (fT) (MHz)
7000
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED