Toshiba Corporation 2SC5084-O(TE85L,F) | 搜芯易Sourcengine

Toshiba Corporation 2SC5084-O(TE85L,F)

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Bipolar Transistors - BJT pb-f mm s-mini,active,
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
80
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.08 A
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
7000 MHz
Collector-base Capacitance-Max
1.15 pF