SANYO Electric Co.,Ltd. 2SC4910 | 搜芯易Sourcengine

SANYO Electric Co.,Ltd. 2SC4910

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
BUILT-IN BALLAST RESISTOR
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
1.5
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.75
Collector-emitter Voltage-Max (V)
18
Power Dissipation Ambient-Max (W)
1.5
Collector-base Capacitance-Max (pF)
10