Toshiba Corporation 2SC4843 | 搜芯易Sourcengine

Toshiba Corporation 2SC4843

生命周期状态
Active-Unconfirmed
说明
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
50
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.04 A
Power Dissipation-Max (Abs)
0.1 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
10 V
Peak Reflow Temperature (Cel)
240
Transition Frequency-Nom (fT)
10000 MHz
Collector-base Capacitance-Max
0.9 pF
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED