Mitsubishi Electric Corp. 2SC4838 | 搜芯易Sourcengine

Mitsubishi Electric Corp. 2SC4838

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFM-F6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
BASE
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
6
Power Gain-Min (Gp)
9.3 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
2 A
Power Dissipation-Max (Abs)
17.5 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
17.5 W