2SC4200
Toshiba Corporation
- 生命周期状态Discontinued
- 说明RF Power Bipolar Transistor, 1-Element, Silicon, NPN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- VCEsat-Max1.5 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionISOLATED
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.6 A
- Power Dissipation-Max (Abs)1.5 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max18 V
- Power Dissipation Ambient-Max5 W
- Transition Frequency-Nom (fT)2500 MHz
- Collector-base Capacitance-Max5 pF
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2SC4200