Renesas Technology Corp. 2SC4196QI-TR-E | 搜芯易Sourcengine

Renesas Technology Corp. 2SC4196QI-TR-E

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e6
Terminal Finish
Tin/Bismuth (Sn/Bi)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
50
Power Dissipation-Max (W)
0.15
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.05
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
15
Collector-base Capacitance-Max (pF)
1
Transition Frequency-Nom (fT) (MHz)
2400
Time@Peak Reflow Temperature-Max (s)
20