Toshiba Corporation 2SC3425 | 搜芯易Sourcengine

Toshiba Corporation 2SC3425

生命周期状态
Contact Mfr
说明
Bipolar Transistors - BJT to126 pls pln-n,discon(07-10)/phase-out(10-01)/obsolete(10-04),
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
0.5 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
4000 ns
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.8 A
Power Dissipation-Max (Abs)
1.2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
400 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
10 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED