Toshiba Corporation 2SC3419-Y | 搜芯易Sourcengine

Toshiba Corporation 2SC3419-Y

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

VCEsat-Max
0.8 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
120
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.8 A
Power Dissipation-Max (Abs)
1.2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
40 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
5 W
Transition Frequency-Nom (fT)
100 MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED