UTC, Ltd. 2SC3357G-RF-AB3-R | 搜芯易Sourcengine

UTC, Ltd. 2SC3357G-RF-AB3-R

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
SINGLE
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
80
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
12
Power Dissipation Ambient-Max (W)
1.2
Collector-base Capacitance-Max (pF)
10
Transition Frequency-Nom (fT) (MHz)
6500
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED