Toshiba Corporation 2SC3268TE12L | 搜芯易Sourcengine

Toshiba Corporation 2SC3268TE12L

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
25
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.07 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
5000 MHz