Toshiba Corporation 2SC2982-B | 搜芯易Sourcengine

Toshiba Corporation 2SC2982-B

生命周期状态
Discontinued
说明
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

VCEsat-Max
0.5 V
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
200
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
2 A
Power Dissipation-Max (Abs)
0.5 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
10 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
1 W
Transition Frequency-Nom (fT)
150 MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED