Toshiba Corporation 2SC2713BLTE85L | 搜芯易Sourcengine

Toshiba Corporation 2SC2713BLTE85L

生命周期状态
Discontinued
说明
Bipolar Transistors - BJT s-mini pln(lf),discon(07-10)/phase-out(09-07)/obsolete(10-04),
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.3 V
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
350
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.1 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
120 V
Transition Frequency-Nom (fT)
100 MHz