Toshiba Corporation 2SC2638 | 搜芯易Sourcengine

Toshiba Corporation 2SC2638

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
10.8
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
15
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
17
Power Dissipation Ambient-Max (W)
15
Collector-base Capacitance-Max (pF)
25