Toshiba Corporation 2SC2318 | 搜芯易Sourcengine

Toshiba Corporation 2SC2318

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-33
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W4
Configuration
SINGLE
JEDEC-95 Code
TO-33
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
4
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
30
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.35
Collector-emitter Voltage-Max (V)
15
Collector-base Capacitance-Max (pF)
3.5
Transition Frequency-Nom (fT) (MHz)
2700