Toshiba Corporation 2SC2290 | 搜芯易Sourcengine

Toshiba Corporation 2SC2290

生命周期状态
Contact Mfr
说明
Trans RF BJT NPN 18V 20A 4-Pin 2-13B1A
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
O-CRFM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
11.8 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
20 A
Power Dissipation-Max (Abs)
175 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
18 V
Power Dissipation Ambient-Max
175 W
Transition Frequency-Nom (fT)
100 MHz
Collector-base Capacitance-Max
500 pF