NEW JERSEY SEMICONDUCTOR PRODUCTS INC 2SC2166 | 搜芯易Sourcengine

NEW JERSEY SEMICONDUCTOR PRODUCTS INC 2SC2166

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Configuration
SINGLE
Number of Elements
1
Polarity/Channel Type
NPN
Highest Frequency Band
HIGH FREQUENCY BAND
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
4
Collector-emitter Voltage-Max (V)
75
Power Dissipation Ambient-Max (W)
1.5