ASI Semiconductor, Inc. 2SC2149 | 搜芯易Sourcengine

ASI Semiconductor, Inc. 2SC2149

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, C Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
X-CXMW-F4
Configuration
SINGLE
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
Power Dissipation-Max (W)
0.29
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
70
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
12
Collector-base Capacitance-Max (pF)
1
Transition Frequency-Nom (fT) (MHz)
4500