Toshiba Corporation 2SC2106 | 搜芯易Sourcengine

Toshiba Corporation 2SC2106

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
6
DC Current Gain-Min (hFE)
10
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2.8
Collector-emitter Voltage-Max (V)
17
Power Dissipation Ambient-Max (W)
30
Collector-base Capacitance-Max (pF)
45