Mitsubishi Electric Corp. 2SC1965A | 搜芯易Sourcengine

Mitsubishi Electric Corp. 2SC1965A

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
Case Connection
EMITTER
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
15
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
17
Power Dissipation Ambient-Max (W)
1.5