Mitsubishi Electric Corp. 2SC1965 | 搜芯易Sourcengine

Mitsubishi Electric Corp. 2SC1965

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
O-MBFM-P3
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
EMITTER
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
10 dB
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
1 A
Power Dissipation-Max (Abs)
1.5 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
17 V
Power Dissipation Ambient-Max
15 W