- 生命周期状态Active
- 说明RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ConfigurationSINGLE
- Case ConnectionEMITTER
- Number of Elements1
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)10
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)7
- Collector-emitter Voltage-Max (V)17
- Power Dissipation Ambient-Max (W)3
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2SC1946A
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2SC1946A