INCHANGE SEMICONDUCTOR CO LTD 2SB891FQ | 搜芯易Sourcengine

INCHANGE SEMICONDUCTOR CO LTD 2SB891FQ

生命周期状态
Contact Mfr
说明
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

VCEsat-Max
0.8 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-126
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
120
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
2 A
Power Dissipation-Max (Abs)
5 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
32 V
Power Dissipation Ambient-Max
1.2 W
Transition Frequency-Nom (fT)
100 MHz
Collector-base Capacitance-Max
50 pF