UTC, Ltd. 2SB857G-B-TN3-R | 搜芯易Sourcengine

UTC, Ltd. 2SB857G-B-TN3-R

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
60
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
4
Collector-emitter Voltage-Max (V)
100
Transition Frequency-Nom (fT) (MHz)
15
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED