Renesas Technology Corp. 2SB857C-E | 搜芯易Sourcengine

Renesas Technology Corp. 2SB857C-E

生命周期状态
Discontinued
说明
Trans GP BJT PNP 50V 4A 3-Pin(3+Tab) TO-220AB
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e2
Case Connection
COLLECTOR
Terminal Finish
TIN COPPER
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
100
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
4
Collector-emitter Voltage-Max (V)
50
Transition Frequency-Nom (fT) (MHz)
15