Hitachi, Ltd. 2SB566B(K) | 搜芯易Sourcengine

Hitachi, Ltd. 2SB566B(K)

生命周期状态
Transferred
说明
Power Bipolar Transistor, 4A I(C), 1-Element, PNP
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE
Surface Mount
NO
Number of Elements
1
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
60
Power Dissipation-Max (W)
40
Collector Current-Max (IC) (A)
4
Operating Temperature-Max (Cel)
150