Toshiba Corporation 2SB1667(SM) | 搜芯易Sourcengine

Toshiba Corporation 2SB1667(SM)

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
1.7
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
1.5
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
60
Power Dissipation Ambient-Max (W)
25
Transition Frequency-Nom (fT) (MHz)
9
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED