SANYO Electric Co.,Ltd. 2SB1226 | 搜芯易Sourcengine

SANYO Electric Co.,Ltd. 2SB1226

生命周期状态
Transferred
说明
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
1.5
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 0.03
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
1500
Power Dissipation-Max (W)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
100
Power Dissipation Ambient-Max (W)
20
Transition Frequency-Nom (fT) (MHz)
20